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| AP9934GM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Full Bridge Application on LCD Monitor Inverter SO-8 N1G P1S/P2S P1G P2G N2D/P2D 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) N2G N1S/N2S N1D/P1D 35V 48m 4.3A -35V 72m -3.6A ID P-CH BVDSS RDS(ON) ID P1S P1G P2S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. N1G P2G P1N1D P2N2D N2G N1S N2S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 20 4.3 3.4 20 1.38 0.01 -55 to 150 -55 to 150 P-channel -35 20 -3.6 -2.8 -20 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200920041 AP9934GM N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.03 8 6 2 3 6 5 14 4 490 130 55 Max. Units 48 70 3 1 25 100 10 780 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=4A VGS=4.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=4A VDS=28V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.2A, VGS=0V IS=4A, VGS=0V dI/dt=100A/s Min. - Typ. 18 11 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP9934GM P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -35 -1 - Typ. -0.02 6 6 1 3 7 5 19 4 420 140 65 Max. Units 72 100 -3 -1 -25 100 10 1100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-3A VGS=-4.5V, ID=-2A VDS=VGS, ID=-250uA VDS=-10V, ID=-3A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=20V ID=-3A VDS=-28V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.2A, VGS=0V IS=-3A, VGS=0V dI/dt=-100A/s Min. - Typ. 20 16 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 186 /W when mounted on Min. copper pad. AP9934GM N-Channel 21 21 T A =25 C 18 o ID , Drain Current (A) ID , Drain Current (A) 15 10V 7.0V 5.0V 4.5V T A = 150 o C 18 10V 7.0V 5.0V 4.5V 15 12 12 9 9 6 6 V G =2.5V 3 V G =2.5V 3 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 1.6 I D =3A 60 T A =25 o C Normalized RDS(ON) 1.4 I D =4A V G =10V RDS(ON) (m ) 1.2 50 1.0 40 0.8 30 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 5 4 3 T j =150 o C 2 Normalized VGS(th) (V) 1.2 1.5 IS(A) T j =25 o C 1 0.5 1 0 0 0.2 0.4 0.6 0.8 1 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9934GM N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) 10 ID=4A V DS = 2 8 V C iss 8 6 C (pF) C oss 100 4 C rss 2 0 0 3 6 9 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 10 0.2 ID (A) 100us 1ms 1 0.1 0.1 0.05 0.02 0.01 Single Pulse P DM t T 10ms 100ms 0.1 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 186/W T A =25 o C Single Pulse 1s DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP9934GM P-Channel 21 21 18 T A =25 o C -ID , Drain Current (A) 15 -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V 18 T A = 150 o C -10V -7.0V -5.0V -4.5V 15 12 12 9 9 V G = - 2.5V 6 6 V G = - 2.5V 3 3 0 0 1 2 3 4 5 0 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.6 I D = -2 A 90 T A =25 C Normalized R DS(ON) 1.2 o 1.4 I D = -3 A V G = - 10V RDS(ON) (m ) 80 1.0 70 0.8 60 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 4 Normalized -VGS(th) (V) 1.2 3 1.5 -IS(A) 2 T j =150 o C T j =25 o C 1 1 0.5 0 0 0.2 0.4 0.6 0.8 1 0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9934GM P-Channel f=1.0MHz 12 1000 -VGS , Gate to Source Voltage (V) 10 I D = -3 A V DS = - 2 8 V C iss 8 6 C (pF) C oss 100 C rss 4 2 0 0 3 6 9 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 0.2 10 0.1 0.1 100us -ID (A) 1 0.05 1ms 10ms 100ms 0.02 0.01 PDM t T Single Pulse 0.01 0.1 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 186/W T A =25 o C Single Pulse 0.01 0.1 1 10 1s DC 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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